Interdigitated rf filter

ABSTRACT

An interdigitated RF filter. The interdigitated RF filter includes input fingers connected to an input node and output fingers connected to an output node where at least one input finger is connected the output node or at least one output finger is connected to the input node. The described interdigitated RF filter can be implemented in various configurations such as series, shunt, ladder or a combination thereof.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 16/863,083, filed Apr. 30, 2020, titled “Interdigitated RFFilter,” now U.S. Pat. No. 11,316,491 issued Apr. 26, 2022, which isherein incorporated by reference in its entirety.

(1) TECHNICAL FIELD

The present teachings generally relate to electronic circuits, and morespecifically to apparatus and method for control of roll off ofinterdigitated radio frequency (RF) filters.

(2) BACKGROUND

Generally, in RF circuits and applications, there is a need for smalllow loss filters with sharp roll off to handle RF power. The frequencyresponse of RF filters may degrade due to parasitics. These parasiticscause the insertion loss of the filter to decrease at higherfrequencies, thus reducing the selectivity of the filter at thosefrequencies. The reduction of insertion loss at higher frequencies isalso referred to as flyback. Historically RF filters are fairly largebecause they are built with passive components which consume a lot ofspace. Since space if often correlated with cost, small size may bedesired for low cost solutions.

Accordingly, there is a need for method and apparatus for control ofroll off of RF filters. The control of roll off of an RF filter wouldenable the RF filter to exhibit better flyback performance.

SUMMARY

Various embodiments of apparatus and method and for control of roll offof interdigitated RF filters are disclosed.

According to a first aspect of the present disclosure, a radio frequency(RF) interdigitated RF filter is provided, comprising: a plurality ofinput fingers connected to an input node; and a plurality of outputfingers connected to an output node, wherein at least one output fingeris connected to the input node, and/or at least one input finger isconnected to the output node.

According to a second aspect of the present disclosure, a method offiltering a signal is disclosed, comprising: providing, between an inputnode and an output one, an electronic structure by interleaving aplurality of input fingers connected to the input node with a pluralityof output fingers connected with the output node; connecting at leastone output finger to the input node or at least one input finger theoutput node; and applying the signal at the input node, therebyfiltering the signal to generate a filtered signal at the output node.

Further aspects of the disclosure are shown in the specification, claimsand drawings of the present application.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosed apparatus, in accordance with one or more variousembodiments, are described with reference to the following figures. Thedrawings are provided for purposes of illustration only and merelydepict examples of some embodiments of the disclosed method andapparatus. These drawings are provided to facilitate the reader'sunderstanding of the disclosed method and apparatus. They should not beconsidered to limit the breadth, scope, or applicability of the claimedinvention. It should be noted that for clarity and ease of illustrationthese drawings are not necessarily made to scale.

FIG. 1 shows a schematic of a prior art interdigitated capacitor 100which can be employed as a component in an RF filter.

FIG. 2 shows a first exemplary layout of an interdigitated RF filter 200according to the present disclosure, where one output finger has beendirectly connected (shorted) to the input.

FIG. 3 illustrates exemplary characteristics of RF frequency responses.

FIG. 4 shows a second exemplary layout of an interdigitated RF filter400 according to the present disclosure, where an intermediate or middlefinger 412 has been directly connected to the output between nodes 404and 408.

FIG. 5A shows a third exemplary layout of an interdigitated RF filter500 according to the present disclosure, where an intermediate or middlefinger 512 has been directly connected to the output between nodes 504and 508.

FIGS. 5B-5C show fourth and fifth exemplary layouts of an interdigitatedRF filter according to the present disclosure.

FIG. 6 shows a sixth exemplary layout of an interdigitated RF filter 600according to the present disclosure, where an output finger 608 has beendirectly connected to the input.

FIG. 7 shows a seventh exemplary layout of an interdigitated RF filteraccording to the present disclosure.

Like reference numbers and designations in the various drawings indicatelike elements.

DETAILED DESCRIPTION

Throughout this document the term “input node” is used to refer to asection of an interdigitated RF filter including input fingers (see forexample FIG. 2). The “input node” connects an input of theinterdigitated RF filter to the input fingers. The term “output node” isused to refer to a section of an interdigitated RF filter includingoutput fingers (see for example FIG. 2). The “output node” connects anoutput of the interdigitated RF filter to the output fingers. The term“node” is used to refer to a section of an interdigitated RF filterincluding input and output fingers. The “node” is connected to both aninput and an output of interdigitated RF filter.

FIG. 1 shows a layout of a prior art interdigitated capacitor 100 alsoreferred to as a Metal Oxide Metal capacitor or MOM capacitor which canbe employed as a component in an RF filter. This capacitor has an input102 and an output 110. This interdigitated capacitor has several fingersconnected to the input 102, for example, four fingers as shown. Severalfingers are connected to the output 110, for example, five fingers asshown. As an example, an input connected finger is indicated byreference number 104 and an output connected finger is indicated byreference number 108. One drawback of prior art RF filters usinginterdigitated capacitors and inductors is that they suffer from flybackphenomenon. They also tend to be large, as the interdigitated capacitorof FIG. 1 would be one of several components in the filter, which mayinclude more of these capacitors as well as inductors which tend to beeven larger than capacitors.

The RF interdigitated RF filter according to the present disclosureprovides solutions to the problem of flyback phenomenon ininterdigitated RF filters, while providing low loss and sharp roll offof the RF characteristics.

FIG. 2 shows a first exemplary layout of an interdigitated RF filter 200according to the present disclosure, where one output finger 208 hasbeen connected to the input. This interdigitated RF filter has an inputnode 202 and an output node 210. This interdigitated RF filter hasseveral fingers connected to the input 202, and several fingersconnected to the output 210. As an example, an input connected finger isindicated by reference number 204 and an output connected finger isindicated by reference number 208. As a further example, another outputfinger is indicated by reference number 205.

The direct connection of the bottom finger 208 of the output to theinput causes the interdigitated RF filter to have a roll offcharacteristic as a function of frequency where the roll of is sharp andthere is very little flyback. The structure acts as a lowpass filter.

FIG. 3 illustrates exemplary characteristics of RF frequency responses.Magnitude of filter loss in dB is shown on the Y-axis 302. Frequency isshown on the X-axis 308. Curve 312 shows the RF characteristics of afive-element filter built with components using the prior art schematicof FIG. 1, where a flyback phenomenon is observed at higher frequencies,for example, around 11 GHz. Curve 310 shows the RF characteristics ofthe schematic of FIG. 2 in accordance with the present disclosure, wherea flyback phenomenon is sharply reduced or no longer present. Thus, theschematic of FIG. 2 exhibits low loss and sharp roll off of the RFcharacteristics without the unwanted flyback phenomenon. The structureof FIG. 2 is also incredibly compact. As stated above, it provides muchof the frequency response of a 5-element filter as shone with curve 312.In many cases the 5-element filter would be at least 5 times larger.

It will be understood by those skilled in the art that this technique ofdirectly connecting a bottom output finger to the input can be used bydirectly connecting the top output finger to the input, instead ofconnecting the bottom output finger to the input.

Differential or balanced implementations of the filter structure arealso possible. FIG. 4 shows a second exemplary layout of aninterdigitated RF filter 400 according to the present disclosure, wherean intermediate or middle finger 412 has been connected between nodes404 and 408. This interdigitated RF filter has a balanced input 402 anda balanced output 410. This connection in the middle also exhibits lowloss and sharp roll off of the RF characteristics without the unwantedflyback phenomenon.

FIG. 5A shows a third exemplary layout of an interdigitated RF filter500 according to the present disclosure, where a finger 512 has beenconnected between nodes 504 and 508. This interdigitated RF filter has abalanced input 502 and a balanced output 510. In an interdigitated RFfilter, the number of fingers, their lengths and the spacing 520 betweenthe input fingers and the output fingers determines the RFcharacteristics of the filter. There are many possible ways to buildthese filters with various number of fingers, finger lengths, fingerwidths, finger spacings, location and number of shorted fingers, and soon. As an example, the finger lengths do not have to be the same lengthacross the structure.

FIG. 5B shows a fourth exemplary layout of an interdigitated RF filteraccording to the present disclosure. As shown, the structure could bulgein the middle or ends to accommodate longer fingers.

FIG. 5C shows a fifth exemplary layout of an interdigitated RF filteraccording to the present disclosure. As shown, the structure may stayrectangular but the fingers do not traverse the same length as you moveacross the structure.

Referring back to the embodiment of FIG. 5A, the spacing between somefingers is less than the spacing between other fingers. For example, afirst type of spacing can range between 1 and 2 um, whereas a secondtype of spacing can range between 5 and 10 um. The capacitive couplingbetween fingers with a larger lateral spacing is less compared to thecapacitive coupling between fingers with a smaller spacing. Thisembodiment with the connection in the middle also exhibits low loss andsharp roll off of the RF characteristics without the unwanted flybackphenomenon.

FIG. 6 shows a sixth exemplary layout of an interdigitated RF filter 600according to the present disclosure, where an output finger 608 has beendirectly connected to the input. This interdigitated RF filter has aninput 602 and an output 610. Additionally, in this embodiment, the endsof the input fingers have been connected to each other in anotherconductive layer, such as another metal layer used in an integratedcircuit process, shown by reference numbers 612 and 616. The ends of theoutput fingers have been connected to each other in another conductivelayer, such as another metal layer, shown by reference numbers 614 and618. This embodiment also exhibits low loss and sharp roll off of the RFcharacteristics without the unwanted flyback phenomenon

It will be understood by those skilled in the art that theseinterdigitated structures can be repeated on lower metal layers as istypically done in IC design to increase capacitor density for MOMcapacitors. FIG. 7 shows a seventh exemplary layout of an interdigitatedRF filter 700 according to the present disclosure. This exemplary layoutshows that the structures can be shifted by one finger and one space orsome fraction of this amount each time it is copied onto a lower layerso that the output fingers are below an input finger and the inputfingers are below an output finger for increased broadside coupling. Asshown in FIG. 7, shorting bar 708 is on the right side for both top andbottom fingers; however, embodiments in accordance with the teachings ofthe disclosure may be envisaged wherein shorting bars are on theopposite sides.

It will also be understood by those skilled in the art that a singlemetal layer can be used to connect the output fingers of aninterdigitated capacitor to the input, whereas in other cases multiplemetal layers may be used to connect the output fingers of aninterdigitated capacitor to the input. It will be further understood bythose skilled in the art that the approaches in accordance with thepresent disclosure are not limited to integrated circuits (IC), and canbe employed in circuits that are built in laminate or in low temperatureco-fired ceramics (LTCC).

In accordance with various embodiments of the present disclosure,interdigitated RF filters may be built wherein:

-   -   a spacing of at least a pair of adjacent input and output        fingers is different from a spacing of the other pairs of        adjacent input and output fingers.    -   all pairs of adjacent input and output fingers have a same        spacing.    -   each pair of adjacent input and output finger has a spacing that        is different from the spacing of any one of the other adjacent        input and output fingers.    -   proceeding from an end or both ends of the RF interdigitated        capacitor to a middle of the RF interdigitated capacitor,        spacings of consecutive pairs of adjacent input and output        fingers follow a non-increasing or a non-decreasing function.    -   It is understood that the above-listed features apply to all of        the embodiments shown in FIGS. 2, and 4-7.

The person skilled in the art will understand that, RF interdigitatedcapacitors according to the present disclosure may be implemented:

-   -   in a shunt configuration wherein a node of the output is        connected to ground.    -   as a resonator. It is possible to connect these resonators in a        variety of more complex multi-resonator filter structures.        Common approaches include multiple series resonators, multiple        shunt resonators (parallel) which are typically separated from        each other by another passive components, or ladder structures        that include shunt and series resonators. Any combination of        these interdigitated RF filters or resonators can be used to        form a more complex, higher order filter.as part of an RF        circuit with other passive components.    -   as part of a digitally tunable capacitor (DTC) or digitally        tunable inductor (DTL).    -   as part of one of a i) low pass, ii) band pass, or c) high pass        filter.

As should be readily apparent to one of ordinary skill in the art,various embodiments of the invention can be implemented to meet a widevariety of specifications. Unless otherwise noted above, selection ofsuitable component values is a matter of design choice and variousembodiments of the invention may be implemented in any suitable ICtechnology (including but not limited to MOSFET structures), or inhybrid or discrete circuit forms. Integrated circuit embodiments may befabricated using any suitable substrates and processes, including butnot limited to standard bulk silicon, silicon-on-insulator (SOI), andsilicon-on-sapphire (SOS). Unless otherwise noted above, the presentlyclaimed subject matter may be implemented in other transistortechnologies such as bipolar, GaAs HBT, GaN HEMT, GaAs pHEMT, and MESFETtechnologies. The presently claimed subject matter has been shown inrelation to NMOS RF switches, however the presently claimed subjectmatter may be implemented in relation with PMOS RF switches as well. TheFabrication in CMOS on SOI or SOS processes enables circuits with lowpower consumption, the ability to withstand high power signals duringoperation due to FET stacking, good linearity, and high frequencyoperation (i.e., radio frequencies up to and exceeding 50 GHz).Monolithic IC implementation is particularly useful since parasiticcapacitances generally can be kept low (or at a minimum, kept uniformacross all units, permitting them to be compensated) by careful design.

A number of embodiments of the invention have been described. It is tobe understood that various modifications may be made without departingfrom the spirit and scope of the invention. For example, some of thesteps described above may be order independent, and thus can beperformed in an order different from that described. Further, some ofthe steps described above may be optional. Various activities describedwith respect to the methods identified above can be executed inrepetitive, serial, or parallel fashion.

It is to be understood that the foregoing description is intended toillustrate and not to limit the scope of the invention, which is definedby the scope of the following claims, and that other embodiments arewithin the scope of the claims.

1. (canceled)
 2. A radio frequency (RF) interdigitated RF filtercomprising: a plurality of input fingers connected to an input node; anda plurality of output fingers connected to an output node; wherein atleast one output finger is connected to the input node, and/or at leastone input finger is connected to the output node.
 3. The RFinterdigitated filter of claim 2 wherein an outermost perimeter of alayout of the interdigitated filter has a polygonal non-rectangularshape.
 4. The RF interdigitated filter of claim 3, wherein the polygonalnon-rectangular shape has at least a bulging in a middle or on a side ofthe layout of the interdigitated filter.
 5. The RF interdigitated filterof claim 2, wherein the plurality of input fingers and the plurality ofoutput fingers are made from a first metal layer.
 6. The RFinterdigitated filter of claim 2, wherein the at least one output fingerand the at least one input finger are respectively a bottom outputfinger and a bottom input finger or a top output finger and a top inputfinger.
 7. The RF interdigitated filter of claim 2, wherein a spacing ofat least a pair of adjacent input and output fingers is different from aspacing of the other pairs of adjacent input and output fingers.
 8. TheRF interdigitated filter of claim 2, wherein all pairs of adjacent inputand output fingers have a same spacing.
 9. The RF interdigitated filterof claim 2, wherein each pair of adjacent input and output fingers has aspacing that is different from a spacing of any one of other adjacentinput and output fingers.
 10. The RF interdigitated filter of claim 2,wherein proceeding from an end or two ends of the RF interdigitatedfilter to a middle of the RF interdigitated filter, spacings ofconsecutive pairs of adjacent input and output fingers follow anon-increasing or a non-decreasing function.
 11. An RF circuitcomprising two or more of the RF interdigitated filters of claim 2implemented in a multi-resonator filter structure with a) seriesresonators, b) parallel resonators, c) ladder configuration ofresonators or a combination thereof.
 12. The RF interdigitated filter ofclaim 2 implemented as part of an RF circuit with other passivecomponents.
 13. The RF interdigitated filter of claim 2 implemented aspart of one of a i) low pass, ii) band pass, or c) high pass filter. 14.The RF interdigitated filter of claim 2 implemented in a balancedconfiguration.
 15. The RF interdigitated filter of claim 2, wherein afinger of the plurality of input fingers or the plurality of outputfingers has a length different from lengths of other fingers of theplurality of input fingers and the plurality of output fingers.
 16. TheRF interdigitated filter of claim 2 wherein: the plurality of inputfingers and the plurality of output fingers are made from a first metallayer; the connecting of the input fingers to the input node is madefrom a second metal layer; and the connecting of the output fingers tothe output node is made from a second metal layer; and
 17. The RFinterdigitated filter of claim 2 wherein: the plurality of input fingersand the plurality of output fingers are made from a first metal layer;and the connecting of at least one output finger to the input node,and/or at least one input finger to the output node is performed using asecond metal layer.
 18. The RF interdigitated filter of claim 2 wherein:the plurality of input fingers and the plurality of output fingers aremade from a first metal layer; and a connection between one or moreoutput fingers and the input node is formed from a second metal layer.19. The RF interdigitated filter of claim 2 wherein: the plurality ofinput fingers and the plurality of output fingers are made from a firstmetal layer; and a connection between one or more input fingers and theoutput node is formed from a second metal layer.
 20. A digitally tunablecapacitor (DTC) comprising the RF interdigitated filter of claim
 2. 21.A digitally tunable inductor (DTL) comprising the RF interdigitatedfilter of claim 2.